產品類別

300mm Silicon Wafer

Parameter
Specification
Growing Method CZ or MCZ
Type P
Dopant Boron
Orientation <100>
Resistivity 1-100 ohm-cm
Diameter 300.00±0.2 mm
Thickness ≥760um, 775±25um or 700-800um
Bow/Warp ≤40um or better
TTV ≤5um or better
Particle ≥0.037um Max 100ea or better
Parameter
Specification
Growing Method CZ or MCZ
Type P
Dopant Boron
Orientation <100>
Resistivity 1-100 ohm-cm
Diameter 300.00±0.2 mm
Thickness ≥760um, 775±25um or 700-800um
Bow/Warp ≤40um or better
TTV ≤5um or better
Particle ≥0.045um Max 100ea or better
Parameter
Specification
Growing Method CZ or MCZ
Type P
Dopant Boron
Orientation <100>
Resistivity 1-100 ohm-cm
Diameter 300.00±0.2 mm
Thickness ≥760um, 775±25um or 700-800um
Bow/Warp ≤40um or better
TTV ≤5um or better
Particle ≥0.065um Max 100ea or better
Parameter
Specification
Growing Method CZ or MCZ
Type P
Dopant Boron
Orientation <100>
Resistivity 1-100 ohm-cm
Diameter 300.00±0.2 mm
Thickness ≥760um, 775±25um or 700-800um
Bow/Warp ≤40um or better
TTV ≤5um or better
Particle ≥0.09um Max 50ea or better
Parameter
Specification
Growing Method CZ or MCZ
Type P
Dopant Boron
Orientation <100>
Resistivity 1-100 ohm-cm
Diameter 300.00±0.2 mm
Thickness ≥760um, 775±25um or 700-800um
Bow/Warp ≤40um or better
TTV ≤5um or better
Particle ≥0.12um Max 50ea or better
Parameter
Specification
Growing Method CZ or MCZ
Type P
Dopant Boron
Orientation <100>
Resistivity 1-100 ohm-cm
Diameter 300.00±0.2 mm
Thickness ≥760um, 775±25um or 700-800um
Bow/Warp ≤100um or better
TTV ≤25um or better
Particle ≥0.20um Max 50ea or better
Parameter
Specification
Growing Method CZ or MCZ
Type P
Dopant Boron
Orientation <100>
Resistivity 1-100 ohm-cm
Diameter 300.00±0.2 mm
Thickness ≥650um, ≥700um, 775±25um
Bow/Warp ≤100um or better
TTV ≤25um or better
Particle ≥0.30um Max 30ea or better
Parameter
Specification
Growing Method CZ or MCZ
Bare Wafer No film & DSP
Type P or N
Resistivity 1-100 ohm-cm; <1 ohm-cm
Diameter 300±0.2 mm; 300±0.5 mm
Thickness ≥650um, ≥700um, 775±25um

Parameter
Specification
Growing Method CZ or MCZ
Type P
Dopant Boron
Orientation <100>
Resistivity 0.1-100 ohm-cm
Diameter 200±0.2 mm
Thickness 725±25um
Bow/Warp ≤60um or better
TTV ≤25um or better
Particle ≥0.20um Max 30ea or better
Parameter
Specification
Growing Method CZ or MCZ
Type P
Dopant Boron
Orientation <100>
Resistivity 0.1-100 ohm-cm
Diameter 200±0.2 mm
Thickness ≥650um
Bow/Warp ≤60um or better
TTV ≤25um or better
Particle ≥0.20um Max 30ea or better
Parameter
Specification
Growing Method CZ or MCZ
Conductivity Type P or N
Crystal Orientation <100>
Dopant B, P, As
Resistivity 1-100 Ohm-cm, 3-5mOhm-cm
Diameter 200±0.2 mm
Notch SEMI Standard
RRG (Radial resistivity gradient) ≤15{67b8bb41c2b1d814eb611eefb55efcd1ffc72ef134897ba7fb65fc3b725a4fb9}
ROG (Radial Oxygen Gradient) ≤10{67b8bb41c2b1d814eb611eefb55efcd1ffc72ef134897ba7fb65fc3b725a4fb9}
EPD (Dislocation Etch Pit Density) Free
Slip/Twin/Swirl Free
Oxygen Concentration 10-15 ppma (New ASTM)
Carbon Concentration ≤1 ppma
Thickness 725±20um or better
TTV ≤4 or better
Bow ≤30um or better
Warp ≤30um or better
SFQR 25*25m2 ≤0.5um or better
LPD @≥0.2um ≤30 ea or better
Front side Surface Finish Polished
Backside Surface Finish Etched or BSP
*Other specification depend on customer request
Parameter
Specification
Diameter 200±0.2mm
Epi Layer Thickness 1-10um
Resistivity 0.1-100 Ohm-cm
Parameter
Specification
Diameter 200±0.2mm
Substrate Thickness ≥650um, 725±25um
Type/ Dopant P/Boron
TTV ≤25um or better
Bow/Warp ≤60um or better
Oxide Thickness 5000-20000 Å
Uniformity ±5{67b8bb41c2b1d814eb611eefb55efcd1ffc72ef134897ba7fb65fc3b725a4fb9} or better
Particle ≥0.30um Max 30ea or better
Parameter
Specification
Growth Method FZ
Conductivity Type P or N
Crystal Orientation <100>
Resistivity >1 kΩcm (max resistivity 50 kΩcm)
Resistivity Tolerance ±30-±50{67b8bb41c2b1d814eb611eefb55efcd1ffc72ef134897ba7fb65fc3b725a4fb9}
Diameter 200±0.2 mm
Notch SEMI Standard
Thickness 725±25um or better
TTV ≤5 or better
Bow ≤30um or better
Warp ≤30um or better
LPD @≥0.2um ≤30 ea or better
Front side Surface Finish Polished
Backside Surface Finish Etched

Parameter
Specification
Growing Method CZ
Type N
Dopant Ph
Diameter 100±0.2um
Orientation <111> , <100> , <110>
Swirl None
Primary Flat 32.5±2.5mm
Location <110>
Resistivity 0.0015-100 Ohm-cm
Thickness 170-750um; ±10um
TTV <5um
Bow/Warp <40um
Front / Backside Surface Lapped / Etched
Parameter
Specification
Growing Method CZ
Type N
Dopant Ph
Diameter 125±0.2um
Orientation <111> , <100> , <110>
Swirl None
Primary Flat 42.5±2.5mm
Location <110>
Resistivity 0.0015-100 Ohm-cm
Thickness 170-750um; ±10um
TTV <5um
Bow/Warp <40um
Front / Backside Surface Lapped / Etched
Parameter
Specification
Growing Method CZ
Type N
Dopant Ph
Diameter 150±0.2um
Orientation <111> , <100> , <110>
Swirl None
Primary Flat 47.5±2.5mm; 57.5±2.5mm
Location <110>
Resistivity 0.0015-100 Ohm-cm
Thickness 170-750um; ±10um
TTV <5um
Bow/Warp <40um
Front / Backside Surface Lapped / Etched
Parameter
Specification
Growing Method CZ
Type P
Dopant B
Diameter 100±0.2um
Orientation <111> , <100> , <110>
Swirl None
Primary Flat 32.5±2.5mm
Location <110>
Resistivity 0.001-100 Ohm-cm
Thickness 170-750um; ±10um
TTV <5um
Bow/Warp <40um
Front / Backside Surface Lapped / Etched
Parameter
Specification
Growing Method CZ
Type P
Dopant B
Diameter 125±0.2um
Orientation <111> , <100> , <110>
Swirl None
Primary Flat 42.5±2.5mm
Location <110>
Resistivity 0.001-100 Ohm-cm
Thickness 170-750um; ±10um
TTV <5um
Bow/Warp <40um
Front / Backside Surface Lapped / Etched
Parameter
Specification
Growing Method CZ
Type P
Dopant B
Diameter 150±0.2um
Orientation <111> , <100> , <110>
Swirl None
Primary Flat 47.5±2.5mm; 57.5±2.5mm
Location <110>
Resistivity 0.001-100 Ohm-cm
Thickness 170-750um; ±10um
TTV <5um
Bow/Warp <40um
Front / Backside Surface Lapped / Etched

Parameter
Specification
Growing Method CZ
Type N
Dopant Ph, Sb, As
Diameter 100±0.2um
Orientation <111> , <100> , <110>
Primary Flat 32.5±2.5mm
Location <110>
Resistivity 0.0010-100 Ohm-cm
Thickness 200-750um ; ±15um
TTV <5um
Bow/Warp <40um
STIR <2um
≥0.2um particle <30 ea / wafer
≥0.3um particle <10 ea / wafer
Front side Surface Polished
Back side Surface Etched / Poly / LTO
Parameter
Specification
Growing Method CZ
Type N
Dopant Ph, Sb, As
Diameter 125±0.2um
Orientation <111> , <100> , <110>
Primary Flat 42.5±2.5mm
Location <110>
Resistivity 0.0010-100 Ohm-cm
Thickness 200-750um ; ±15um
TTV <5um
Bow/Warp <40um
STIR <2um
≥0.2um particle <30 ea / wafer
≥0.3um particle <10 ea / wafer
Front side Surface Polished
Back side Surface Etched / Poly / LTO
Parameter
Specification
Growing Method CZ
Type N
Dopant Ph, Sb, As
Diameter 150±0.2um
Orientation <111> , <100> , <110>
Primary Flat 47.5±2.5mm; 57.5±2.5mm
Location <110>
Resistivity 0.0010-100 Ohm-cm
Thickness 200-750um ; ±15um
TTV <5um
Bow/Warp <40um
STIR <2um
≥0.2um particle <30 ea / wafer
≥0.3um particle <10 ea / wafer
Front side Surface Polished
Back side Surface Etched / Poly / LTO
Parameter
Specification
Growing Method CZ
Type P
Dopant B
Diameter 100±0.2um
Orientation <111> , <100> , <110>
Primary Flat 32.5±2.5mm
Location <110>
Resistivity 0.0010-100 Ohm-cm
Thickness 200-750um ; ±15um
TTV <5um
Bow/Warp <40um
STIR <2um
≥0.2um particle <30 ea / wafer
≥0.3um particle <10 ea / wafer
Front side Surface Polished
Back side Surface Etched / Poly / LTO
Parameter
Specification
Growing Method CZ
Type P
Dopant B
Diameter 125±0.2um
Orientation <111> , <100> , <110>
Primary Flat 42.5±2.5mm
Location <110>
Resistivity 0.0010-100 Ohm-cm
Thickness 200-750um ; ±15um
TTV <5um
Bow/Warp <40um
STIR <2um
≥0.2um particle <30 ea / wafer
≥0.3um particle <10 ea / wafer
Front side Surface Polished
Back side Surface Etched / Poly / LTO
Parameter
Specification
Growing Method CZ
Type P
Dopant B
Diameter 150±0.2um
Orientation <111> , <100> , <110>
Primary Flat 47.5±2.5mm; 57.5±2.5mm
Location <110>
Resistivity 0.0010-100 Ohm-cm
Thickness 200-750um ; ±15um
TTV <5um
Bow/Warp <40um
STIR <2um
≥0.2um particle <30 ea / wafer
≥0.3um particle <10 ea / wafer
Front side Surface Polished
Back side Surface Etched / Poly / LTO

Parameter
Specification
Material MCZ/CZ
Type P/N
Dopant B, Ph, As, Sb
Diameter 200mm/300mm
Orientation <100>
Resistivity 0.1-100 (ohm-cm)
Thickness 725±25um/775±25um
TTV ≤25um
Bow/Warp ≤50um
Aluminum Layer Thickness 0-10000Å
Aluminum Layer Thickness Tolerance ±10{67b8bb41c2b1d814eb611eefb55efcd1ffc72ef134897ba7fb65fc3b725a4fb9}
Adhesion Test Classification 5B

Parameter
Specification
Material Single Crystalline Silicon
Diameter 300-350mm
Ingot Length As customer required
Type/Dopant P/Boron
Crystal Orientation <100>
Overall Purity >6N
Resistivity As customer required
Ingot Cylinder Surface Finish Grinding
Parameter
Specification
Material Single Crystalline Silicon
Diameter 200-300mm
Ingot Length As customer required
Type/Dopant P/Boron
Crystal Orientation <100>
Overall Purity >6N
Resistivity As customer required
Ingot Cylinder Surface Finish Grinding
Parameter
Specification
Material Single Crystalline Silicon
Diameter 150-200 mm
Ingot Length As customer required
Type/Dopant P/Boron
Crystal Orientation <100>
Overall Purity >6N
Resistivity As customer required
Ingot Cylinder Surface Finish Grinding